![]() ![]() These operations include microcomputer, logic, analog and discrete devices, and memory chips.īD439 : Complementary Silicon Power Transistors. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. SMF16AT1G : Tv - Diode Circuit Protection 16V 200W TVS ZENER 200W 16V SOD123FL Specifications: Package / Case: SOD-123F Packaging: Cut Tape (CT) Polarization: Unidirectional Power (Watts): 200W Voltage - Reverse Standoff (Typ): 16V Voltage - Breakdown: 17.8V Lead Free Status: Lead Free RoHS Status: RoHS CompliantĢN6301 : Screening Options Available = Polarity = NPN Package = TO66 (TO213AA) Vceo = 80V IC(cont) = 8A HFE(min) = 750 HFE(max) = 18000 Vce/ic = 3V / 4A FT = 4MHz PD = 75W.ĢS303A : Screening Options Available = Polarity = NPN Package = TO39 (TO205AD) Vceo = 25V IC(cont) = 0.1A HFE(min) = 25 HFE(max) = 85 Vce/ic = 5V / 10mA FT = 1.2MHz PD = 0.3W.ĢSA1617 : Small Signal General Purpose Transistor. SZNUD3160DMT1G : Pmic - Mosfet, Bridge Driver - Internal Switch Integrated Circuit (ics) IC INDCT LOAD DRVR INDUST SC74-6 Specifications: Lead Free Status: Lead Free RoHS Status: RoHS CompliantīTB12H-600CW3G : Triac Discrete Semiconductor Product 12A 600V Standard TRIAC 12A 600V TO-220AB Specifications: Triac Type: Standard Configuration: Single Voltage - Off State: 600V Current - On State (It (RMS)) (Max): 12A Voltage - Gate Trigger (Vgt) (Max): 1.1V Current - Gate Trigger (Igt) (Max): 35mA Current - Hold (Ih) (Max): 45mA Current - Non Rep. M74VHC1GT125DT1G : Single Unbuffered Inverter MC14024BDR2 : 7-Segment Ripple Counter, Package: Soic, Pins=14 Some Part number from the same manufacture ON SemiconductorīAT54LT1 Schottky Barrier Diode, Package: SOT-23 (TO-236), Pins=3īAT54SL Dual Series Schottky Barrier DiodeīAT54SLT1 Dual Series Schottky Barrier Diode, Package: SOT-23 (TO-236), Pins=3īAT54SW Dual Series Schottky Barrier DiodeīAT54SWT1 Dual Series Schottky Barrier Diode, Package: SC-70 (SOT-323), Pins=3īAT54T1 Small Signal SOD123 Schottky Diode 30V, Package: SOD-123, Pins=2īAT54WT1 Schottky Barrier Diode, Package: SC-70 (SOT-323), Pins=3īAT54XV2T1 Small Signal SOD123 Schottky Diode 30V, Package: SOD-123, Pins=2īAV199LT1 Dual Series Switching Diode, Package: SOT-23 (TO-236), Pins=3īAV70 Small Signal Switching Diodes in SOT563īAV70DXV6T1 Common Cathode Switching Diode, Package: SOT-563, Pins=6īAV70DXV6T5 Small Signal Switching Diodes in SOT563īAV70DXV6T5 Common Cathode Switching Diode, Package: SOT-563, Pins=6īAV70L Monolithic Dual Common Cathode Switching DiodeīAV70LT1 Small Signal Common Cathode, Package: SOT-23 (TO-236), Pins=3īAV70TT1 Dual Switching Diode, Package: SC-75 (SC-90, SOT-416), Pins=3 Recovery Time Equivalent Test Circuitġ00 IF, FORWARD CURRENT (mA) IR, REVERSE CURRENT (♚) Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Preferred devices are recommended choices for future use and best overall value.Ĭharacteristic Reverse Breakdown Voltage (IR = 10 ♚) Total Capacitance (VR = 1.0 MHz) Reverse Leakage (VR 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Current (DC) Repetitive Peak Forward Current NonRepetitive Peak Forward Current 1.0 s) Symbol V(BR)R IR VF trr VF IF IFRM IFSM Min 30 Typ Max Unit Volts pF ♚dc Vdc ns Vdc mAdcĠ.1 ♟ DUT 50 Output Pulse Generator 50 Input Sampling Oscilloscope 90% VR INPUT SIGNAL IR iR(REC) 1 mA OUTPUT PULSE (IF = 10 mA measured at iR(REC) = 1 mA) t IF trr t FR4 Minimum Pad Symbol PD Max 200 1.57 RqJA TJ, Tstg 635 150 Unit mW mW/☌ ☌/W ☌ Rating Reverse Voltage Symbol VR Value 30 Unit VĬharacteristic Total Device Dissipation FR5 Board, (Note = 25☌ Derate above 25☌ Thermal Resistance Junction to Ambient Junction and Storage Temperature 1. Extremely Fast Switching Speed Low Forward Voltage 0.35 Volts (Typ) = 10 mAdc Device Marking: JVģ0 VOLT SILICON HOTCARRIER DETECTOR AND SWITCHING DIODES Miniature surface mount package is excellent for hand held and portable applications where space is limited. Extremely low forward voltage reduces conduction loss. These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. ![]()
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